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| inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2111 description collector-emitter breakdown voltage- : v (br)ceo = 120v(min) collector-emitter saturation voltage- : v ce(sat) = 1.5v(max) @i c = 1.5a high dc current gain : h fe = 1000(min) @ i c = 1.5a, v ce = 3v applications designed for low frequency power amplifier applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 7 v i c collector current-continuous 3 a i cm collector current-peak 6 a collector power dissipation @ t c =25 25 p c collector power dissipation @ t a =25 2 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2111 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 25ma ; r be = 120 v v (br)cbo collector-base breakdown voltage i c = 0.1ma; i e = 0 120 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce( sat )-1 collector-emitter saturation voltage i c = 1.5a; i b = 3ma 1.5 v v ce( sat )-2 collector-emitter saturation voltage i c = 3a; i b = 30ma b 3.0 v v be( sat )-1 base-emitter saturation voltage i c = 1.5a; i b = 3ma 2.0 v v be( sat )-2 base-emitter saturation voltage i c = 3a; i b = 30ma b 3.5 v i cbo collector cutoff current v cb = 100v; i e = 0 10 a i ceo collector cutoff current v ce = 100v; r be = 10 a h fe dc current gain i c = 1.5a; v ce = 3v 1000 20000 v ecf c-e diode forward voltage i f = 3a 3.0 v isc website www.iscsemi.cn 2 |
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